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december 2013 thermal characteristics fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet 800 v, 8.0 a, 1.55 ? description ?2003 fairchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 1 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet this n-channel enhancement mode power mosfet is produced using fairchild semiconductors proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. features ? 8.0 a, 800 v, r ds(on) = 1.55 ? (max.) @ v gs = 10 v, i d = 4.0 a ? low gate charge (typ. 35 nc) ? low crss (typ. 13 pf) ? 100% avalanche tested absolute maximum ratings t c = 2 5c unless otherwise noted. symbol parameter fqp8N80C fqpf8N80C unit r jc thermal resistance, junc tion-to-case, max. 0.89 2.66 c / w r cs thermal resistance, cas e-to-sink typ, max. 0.5 -- c / w r ja thermal resistance, junc tion-to-ambient, max. 62.5 62.5 c / w to-220 g d s to-220f g d s g s d * drain current limited by maximum junction temperature. symbol parameter fqp8N80C fqpf8N80C unit v dss drain-source voltage 800 v i d drain current - continuous (t c = 25c) 88 *a - continuous (t c = 100c) 5.1 5.1 * a i dm drain current - pulsed (note 1) 32 32 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 850 mj i ar avalanche current (note 1) 8a e ar repetitive avalanche energy (note 1) 17.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 178 59 w - derate above 25c 1.43 0.48 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering , 1/8" from case for 5 seconds 300 c g s d to-220f y-formed
package marking and ordering information ?2003 fairchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 2 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet electrical characteristics t c = 25c unl ess otherwise noted. part number top mark package reel size tape width quantity fqp8N80C fqp8N80C to-220 n/a n/a 50 units packing method tube to-220f tube n/a n/a 50 units fqpf8N80C fqpf8N80C tube n/a n/a 50 units fqpf8N80C fqpf8N80Cydtu to-220f (y-formed) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 800 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.5 -- v/c i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v -- -- 10 a v ds = 640 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4 a -- 1.29 1.55 ? g fs forward transconductance v ds = 50 v, i d = 4 a (note 4) -- 5.6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1580 2050 pf c oss output capacitance -- 135 175 pf c rss reverse transfer capacitance -- 13 17 pf switching characteristics t d(on) turn-on delay time v dd = 400 v, i d = 8 a, r g = 25 ? (note 4, 5) -- 40 90 ns t r turn-on rise time -- 110 230 ns t d(off) turn-off delay time -- 65 140 ns t f turn-off fall time -- 70 150 ns q g total gate charge v ds = 640 v, i d = 8 a, v gs = 10 v (note 4, 5) -- 35 45 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 14 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 8 a i sm maximum pulsed drain-source diode forward current -- -- 32 a v sd drain-source diode forward voltage v gs = 0 v, i s = 8 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 8 a, di f / dt = 100 a/ s (note 4) -- 690 -- ns q rr reverse recovery charge -- 8.2 -- c notes: 1. repetitive rati ng : pulse-widt h limited by maximum junction temperature. 2. l = 25 mh, i as = 8 a , v dd = 50 v, r g = 25 ?, starting t j = 25c. 3. i sd 8 a , di/dt 200 a/ s, v dd bv dss, starting t j = 25c. 4. pulse test : pulse-width 300 s, duty cycle 2%. 5. essentially independe nt of oper ati ng temperature.
?2003 fairchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 3 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet ! 04 0 1 21 62 0 1.0 1.5 2.0 2.5 3.0 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] 2 2 81 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] 4 v gs , gate-source voltage [v] v ds , drain-source voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 2. transfer characteristics v ds , drain-source voltage [v] figure 1. on-region characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 c iss = c gs + c gd (c ds = shorted) c gd ds c = c + c gd c rs os s s = notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] 01 0 3 04 0 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v note : i d = 8a v gs , gate-source voltage [v] 2 0 q g , total gate charge [nc] figure 4. body diode forward voltage variation with source current and temperature 6 8
?2003 fairchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 4 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet typical characteristics (continued) figure 9-1. maximum safe operating area for fqp8N80C figure 10. maximum drain current vs case temperature figure 9-2. m aximum safe operating area for fqpf8N80C 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ ] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 4.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature
?2003 fairchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 5 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet typical characteristics (continued) t 1 , square w ave pulse duration [sec] figure 11-1. transient thermal response curve for fqp8N80C t 1 , square w ave pulse duration [sec] figure 11-2. transient thermal response curve for fqpf8N80C 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z (t) = 0.7 /w m a x. 2 . d ut jc y f a ctor, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 2.1 /w m ax. 2. d uty factor, z 1 d =t /t 2 3. t jm - t c = p dm * jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z ? jc (t), thermal response [ o c/w] z ? jc (t), thermal response [ o c/w]
figure 12. gate charge test circuit & waveform figure 13. resistive switching test circuit & waveforms figure 14. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p v gs v gs i g = const. ?2003 fairchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 6 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet
figure 15. peak diode recovery dv /dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- ?2003 fairchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 7 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet
www.fairchildsemi.com 8 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet mechanical dimensions figure 16 . to220, molded, 3-lead, jedec variation ab package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_to220-003 ?2003 fairchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1
?2003 f airchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 9 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet mechanical dimensions figure 17. to220, molded, 3-lead, full pack, eiaj sc91, straight lead package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tf220-003
?2003 f airchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 10 mechanical dimensions figure 18 . to220, molded, 3-lead , full pack, eiaj sc91, y-formed package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tf220-fa3 fqp8N80C / fqpf8N80C / fqpf8N80Cydtu n-channel qfet ? mosfet
?2003 fairchild semiconductor corporation fqp8N80C / fqpf8N80C / fqpf8N80Cydtu rev. c1 www.fairchildsemi.com 11 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchilds worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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